technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com zener diode ? monolithic temperature compensated zener reference chips ? all junctions completely protected with silicon dioxide ? electrically equivalent to 1n821 thru 1n829 ? compatible with all wire bonding and die attach techniques with the exception of solder reflow qualified per mil-prf-19500/159 lds-0071 rev. 2 (101557) page 1 of 2 devices qualified levels 1n821 1n825 1n829 janhc 1N823 1n827 jankc (for 1n821 thru 1n829) maximum rating at 25c operating temperature: -65c to +175c storage temperature: -65c to +175c reverse leakage current i r = 2 a @ 25c & v r = 3vdc electrical characteristics (t a = 25c, unless otherwise specified) type number zener voltage zener test current maximum zener impedance -55 to +100 voltage temperature stability effective temperature coefficient v zt @ i zt i zt z zt (note 1) 3 v zt (note 2) volts ma ohms mv % / c 1n821 5.9 ? 6.5 7.5 15 96 0.01 1N823 5.9 ? 6.5 7.5 15 48 0.005 1n825 5.9 ? 6.5 7.5 15 19 0.002 1n827 5.9 ? 6.5 7.5 15 9 0.001 1n829 5.9 ? 6.5 7.5 15 5 0.0005 note: 1. zener impedance is derived by superimposing on i zt a 60hz rms a.c. current equal to 10% of i zt . 2. the maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mv at any discrete temperature between the established limits, per jedec standard no.5 a t c
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com lds-0071 rev. 2 (101557) page 2 of 2 package dimensions backside must be electrically isolat ed to ensure proper performance. design data metallization: top: 1 (cathode) al circuit layout data: 2 (anode) al for zener operation, cathode must be operated positive with respect to anode. 3 (test pad) al test pad is for wire bond ev aluation only. no electrical cont act is made with test pad. back: au al thickness 25,000? minimum. gold thickness 4,000? minimum. chip thickness .010 inch (0. 25 mm) 0.002 inch (+0.05 mm). notes: 1. dimensions are in inches unless otherwise indicated. 2. millimeters are given for general information only. 3. in accordance with asme y14. 5m, diameters are equivalent to x symbology. janhc and jankc (a-version) die dimensions . symbol dimensions inches millimeters min max min max a .0280 .0320 .711 .813 b .0080 .0100 .203 .254 c .0104 .0106 .264 .269 d .0019 .0021 .048 .053 e .0054 .0056 .137 .142 f .0020 .0040 .050 .102 g .0280 .0320 .711 .813 h .0030 .0050 .076 .127 j .0030 .0050 .076 .127 k .0209 .0211 .531 .536 l .0080 .0100 .203 .254 m .0104 .0106 .264 .269 n .0059 .0061 .150 .155
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